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HBT是什么意思


中文翻译异质结双极型晶体管

网络释义

1)HBT,异质结双极型晶体管2)Heterojunction bipolar transistor,异质结双极型晶体管3)HBT (heterojunction bipolar transistor),HBT(异质结双极型晶体管)4)single-heterojunction bipolar transistor(SHBT),单异质结双极型晶体管5)heterojunction bipolar transisters(HBT),异质结双极型晶体管(HBT)6)double heterojunction bipolar transistor,双异质结双极晶体管

用法例句

    SiGe HBT Class AB Power Amplifier for Wireless Communications;

    用于无线通信的SiGe异质结双极型晶体管AB类功率放大器(英文)

    Frequency performance is the first key factor in the design of heterojunction bipolar transistor(HBT),fTand fmax are the main frequency parameters.

    频率特性是异质结双极型晶体管(HBT)设计中应首先考虑的因素,而fT,fmax则是HBT最主要的频率性能指标。

    An InP-based single-heterojunction bipolar transistor(SHBT)with base μ-bridge and emitter air-bridge is reported.

    报道了具有基极微空气桥和发射极空气桥结构的InP单异质结双极型晶体管(SHBT)。

    We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China.

    报道了一种自对准InP/InGaAs双异质结双极晶体管的器件性能。

    heterojunction bipolar transistor

    异质结双极型晶体管

    SiGe Heterojunction Bipolar Transistor (SiGe HBT) Research and Design;

    SiGe异质结双极晶体管(SiGe HBT)研究与设计

    Study on ESD of InGaP Heterojunction Bipolar Transistors

    InGaP异质结双极晶体管ESD特性研究

    A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

    一种InP双异质结双极晶体管小信号物理模型及其提取方法

    Status of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors Technology

    InP/GaAsSb/InP双异质结双极晶体管技术发展现状(Ⅰ)

    The DFM of Ultrahigh SiGe HBT;

    超高频SiGe异质结双极晶体管的可制造性设计

    Simulation, Design and Fabrication of GaAs-based Heterostructure Bipolar Transistor;

    GaAs基异质结双极晶体管(HBT)的模拟、设计与制作

    Experimental Research on Reliability of GeSi/Si Heterojunction Bipolar Transistors (HBTs);

    GeSi/Si异质结双极晶体管(HBT)可靠性实验研究

    The Study and Design of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs);

    高频功率SiGe异质结双极晶体管(HBTs)的研究与设计

    The Study of SiGe Heterojunction Bipolar Transistors and its Integrated Circuits;

    SiGe异质结双极晶体管及其集成电路的研究

    The Research of Base Dopant Outdiffusion and Setback Layers in SiGe Microwave Heterojunction Bipolar Transistor(HBT);

    SiGe微波异质结双极晶体管中基区杂质外扩及阻挡层的研究

    Experimental Research on Reliability of Si/SiGe/Si Heterojunction Bipolar Transistors (HBTs) under Thermal and Electrical Stress;

    热电应力下Si/SiGe/Si异质结双极晶体管(HBTs)可靠性实验研究

    double heterojunction laser diode

    双异质结激光二极管

    monorail double heterojunction diode

    单轨双异质结二极管

    The Convergence Characteristic of the Forward I-V Characteristic Curves of Emitter-base Junction of Bipolar Junction Transistor;

    双极结型晶体管发射结正向I-V特性曲线的汇聚特性

    Measuring methods for insulated-gate bipolar transistor

    GB/T17007-1997绝缘栅双极型晶体管测试方法

    Effects of Stress on Bipolar Transistor Performance Parameters

    应力对双极型晶体管参数性能的影响

    A Study of the Structure and the Performance of Microwave Silicon Bipolar Transistor Using for MMIC and Its Process Development

    用于MMIC硅基双极型高频微波晶体管结构、性能研究及工艺开发